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RP1E100RP
? Electrical characteristics (Ta = 25 ? C)
　
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
-
Typ.
-
Max.
? 10
Unit
? A
Conditions
V GS = ? 20V, V DS =0V
Drain-source breakdown voltage V (BR)DSS
? 30
-
-
V
I D = ? 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
I DSS
V GS (th)
-
? 1.0
-
-
? 1
? 2.5
? A
V
V DS = ? 30V, V GS =0V
V DS = ? 10V, I D = ? 1mA
Static drain-source on-state
resistance
R DS (on) *
-
-
-
9.0
12.5
14.0
12.6
17.5
19.6
I D = ? 10A, V GS = ? 10V
m ? I D = ? 5A, V GS = ? 4.5V
I D = ? 5A, V GS = ? 4.0V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
l Y fs l *
C iss
C oss
C rss
t d(on) *
t r *
t d(off) *
t f *
Q g *
Q gs *
Q gd *
13
-
-
-
-
-
-
-
-
-
-
-
3600
450
450
25
60
150
100
39
8.5
13.5
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I D = ? 10A, V DS = ? 10V
V DS = ? 10V
V GS =0V
f=1MHz
I D = ? 5A, V DD ? 15V
V GS = ? 10V
R L =3.0 ?
R G =10 ?
I D = ? 10A, V DD ? 15V
V GS = ? 5V R L =1.5 ?
R G =10 ?
*Pulsed
? Body diode characteristics (Source-Drain) (Ta = 25 ? C)
Parameter
Forward Voltage
Symbol
V SD *
Min.
-
Typ.
-
Max.
? 1.2
Unit
V
Conditions
I s = ? 10A, V GS =0V
*Pulsed
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2/5
2010.07 - Rev.B
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